SiO2/Si基底CVD石墨烯,石墨烯套装,SiO2基底单层石墨烯,SiO2基底单/双层石墨烯

石墨烯专家


CVD石墨烯:SiO2/Si基底
CVD Graphene on SiO2/Si

Graphene Film Trial Kit, 石墨烯套装
Monolayer Graphene on 285 nm SiO2 Wafer, 285nm SiO2基底单层石墨烯
Monolayer Graphene on 90 nm SiO2 Wafer, 90nm SiO2基底单层石墨烯"
Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer, 285nm SiO2基底单/双层石墨烯
Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer, 90nm SiO2基底单/双层石墨烯

 

CVD石墨烯:SiO2/Si基底 CVD Graphene on SiO2/Si
Graphene Film Trial Kit
石墨烯膜套装
  石墨烯膜套装 Includes:
Two Single/Double Layer Graphene samples on 285 nm Silicon Dioxide Wafers: 1cm x 1 cm
Two 10mmx10mm samples, Graphene Film on Nickel: 1 cm x 1 cm
One sample of Multilayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm
One sample of Monolayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm
One sample of Monolayer Graphene on Glass: 1" x 1"

If you are interested in investigating numerous different samples of graphene coatings, this trial kit is ideal. All of the samples are made by Chemical Vapor Deposition and give a strong Raman signal.

A great value for students and scientific researchers alike interested in trying different samples.
Monolayer Graphene on 285 nm SiO2 Wafer
285nm SiO2基底单层石墨烯
4” (100mm) wafer SiO2基底单层石墨烯 Monolayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.

Properties of Graphene Film:
The thickness and quality of our graphene films is controlled by Raman Spectroscopy
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
Sheet Resistance: 660-1,500 Ω/□

Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.

Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched

Our graphene films are manufactured using a PMMA assisted transfer method.

拉曼光谱图 / 光学图像 / 4” (100mm) wafer 尺寸图
10mm×10mm 10片 SiO2基底单层石墨烯
10mm×10mm 5片 SiO2基底单层石墨烯
Monolayer Graphene on 90 nm SiO2 Wafer
90nm SiO2基底单层石墨烯
10mm×10mm 5片 SiO2基底单层石墨烯 Monolayer graphene on silicon wafers with 90 nanometer silicon dioxide coating.

Properties of Graphene Film:
The thickness and quality of our graphene films is controlled by Raman Spectroscopy
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
Sheet Resistance: 660-1,500 Ω/□

Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.


Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 90 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched

Our graphene films are manufactured using a PMMA assisted transfer method.

拉曼光谱图 / 光学图像
Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer
285nm SiO2基底单/双层石墨烯
10mm×10mm 10片 SiO2基底单层石墨烯 Mono and bilayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.

The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes.

Properties of Graphene Film:
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched

Our graphene films are manufactured using a PMMA assisted transfer method.

光学图像 / 范例SEM图像
Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer
90nm SiO2基底单/双层石墨烯
10mm×10mm 10片 SiO2基底单层石墨烯 Mono and bilayer graphene on silicon wafers (p-doped) with a 90 nanometer silicon dioxide coating.

The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes.

Properties of Graphene Film:
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 90 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched

Our graphene films are manufactured using a PMMA assisted transfer method.

光学图像 / 范例SEM图像

 


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